School: Science

This unit information may be updated and amended immediately prior to semester. To ensure you have the correct outline, please check it again at the beginning of semester.

  • Unit Title

    Electronic Devices
  • Unit Code

    SCP3343
  • Year

    2016
  • Enrolment Period

    1
  • Version

    1
  • Credit Points

    15
  • Full Year Unit

    N
  • Mode of Delivery


Description

This unit develops a knowledge of topics covering the properties and behaviour of electronic devices, from basic semiconductor materials, through electronic device physics, to integrated circuit technology. Specific topics covered include energy bands and carrier concentrations, carrier transport phenomena, the p-n junction, bipolar devices, unipolar devices, microwave and photonic devices, and an introduction to VLSI technology.

Prerequisite Rule

Students must pass 2 units from MAT1236, SCP2211

Learning Outcomes

On completion of this unit students should be able to:

  1. Apply process and problem solving skills in dealing with conceptual and experimental situations.
  2. Demonstrate proficiency in handling a range of physics equipment associated with measuring the properties and behaviour of semiconductor materials and device structures.
  3. Describe the leading edge technologies in VLSI.
  4. Explain the basic properties of semiconductors, various transport phenomena that arise from the motion of carriers in semiconductors under the influence of an electric field and a carrier concentration gradient; the behaviour and operation of semiconductor devices, and the fundamentals of CMOS VLSI technology.

Unit Content

  1. Bipolar devices - the transistor action, static characteristics of bipolar transistors, frequency response and switching of bipolar transistors, the thyristor.
  2. Carrier transport phenomena - carrier drift, diffusion and injection.
  3. Energy bands and carrier statistics - semiconductor materials and their structure, valence bonds, energy bands, density of states, intrinsic carrier concentration, donors and acceptors.
  4. Introduction to VLSI - CMOS logic, circuit and system representations, silicon semiconductor technology (wafer processing, oxidation, etc).
  5. Microwave and photonic devices - gallium arsenide MESFET, tunnel diode, light-emitting diode, semiconductor laser, photodetector, solar cells.
  6. Semiconductor p-n junctions and diodes - thermal equilibrium conditions, current-voltage characteristics and junction breakdown.
  7. Unipolar devices - metal-semiconductor contacts, JFET, MESFET, MOS diode, MOSFET.

Additional Learning Experience Information

Lectures, tutorials and laboratory activities.

Assessment

GS1 GRADING SCHEMA 1 Used for standard coursework units

Students please note: The marks and grades received by students on assessments may be subject to further moderation. All marks and grades are to be considered provisional until endorsed by the relevant Board of Examiners.

ON CAMPUS
TypeDescriptionValue
AssignmentTest or assignment(s) - to be determined in consultation with class15%
Laboratory Work ^Laboratory work35%
ExaminationEnd of sememster examination50%

^ Mandatory to Pass

Text References

  • ^ Neaman, D.A. (2003). Semiconductor physics and devices: Basic principles (3rd ed.). Boston: McGraw-Hill.
  • Fraser, D.A. (1990). The physics of semiconductor devices (4th ed.). Oxford: Clarendon Press.
  • Warnes, L.A.A. (1990). Electronic materials. New York: Van Nostrand Reinhold.
  • Sze, S.M. (1985). Semiconductor devices, physics and technology. New York: John Wiley.
  • Streetman, B.G., & Banerjee, S. (2000). Solid state electronic devices (5th ed.). Upper Saddle Valley, New Jersey: Prentice-Hall.
  • Hook, M.N., & Wilson, J. (1991). Solid state physics (2nd ed.). Chichester: John Wiley.
  • Modular Series on Solid State Devices, Volumes I, II, III & IV. Reading, Massachusetts: Addison-Wesley.
  • Rudden, M.N., & Wilson, J. (1993). Elements of solid state physics (2nd ed.). Chichester: John Wiley.
  • Schroder, D.K. (1990). Semiconductor material and device characterisation. New York: John Wiley.
  • Shur, M. (1990). Physics of semiconductor devices. Englewood Cliffs, New Jersey: Prentice-Hall.
  • Solymar, L., & Walsh, D. (1993). Lectures on the electrical properties of materials (5th ed.). Oxford: Oxford University Press.

Journal References

  • IEEE Spectrum, New York: IEEE.
  • IEEE Journal of Solid State Circuits, New York: IEEE Solid-State Circuits Society.
  • IEEE Transactions on Electron Devices, New York: IEEE Electron Devices Society.
  • Physics Today, New York: American Institute of Physics.

^ Mandatory reference


Disability Standards for Education (Commonwealth 2005)

For the purposes of considering a request for Reasonable Adjustments under the Disability Standards for Education (Commonwealth 2005), inherent requirements for this subject are articulated in the Unit Description, Learning Outcomes and Assessment Requirements of this entry. The University is dedicated to provide support to those with special requirements. Further details on the support for students with disabilities or medical conditions can be found at the Access and Inclusion website.

Academic Misconduct

Edith Cowan University has firm rules governing academic misconduct and there are substantial penalties that can be applied to students who are found in breach of these rules. Academic misconduct includes, but is not limited to:

  • plagiarism;
  • unauthorised collaboration;
  • cheating in examinations;
  • theft of other students' work;

Additionally, any material submitted for assessment purposes must be work that has not been submitted previously, by any person, for any other unit at ECU or elsewhere.

The ECU rules and policies governing all academic activities, including misconduct, can be accessed through the ECU website.

SCP3343|1|1

School: Science

This unit information may be updated and amended immediately prior to semester. To ensure you have the correct outline, please check it again at the beginning of semester.

  • Unit Title

    Electronic Devices
  • Unit Code

    SCP3343
  • Year

    2016
  • Enrolment Period

    2
  • Version

    1
  • Credit Points

    15
  • Full Year Unit

    N
  • Mode of Delivery


Description

This unit develops a knowledge of topics covering the properties and behaviour of electronic devices, from basic semiconductor materials, through electronic device physics, to integrated circuit technology. Specific topics covered include energy bands and carrier concentrations, carrier transport phenomena, the p-n junction, bipolar devices, unipolar devices, microwave and photonic devices, and an introduction to VLSI technology.

Prerequisite Rule

Students must pass 2 units from MAT1236, SCP2211

Learning Outcomes

On completion of this unit students should be able to:

  1. Apply process and problem solving skills in dealing with conceptual and experimental situations.
  2. Demonstrate proficiency in handling a range of physics equipment associated with measuring the properties and behaviour of semiconductor materials and device structures.
  3. Describe the leading edge technologies in VLSI.
  4. Explain the basic properties of semiconductors, various transport phenomena that arise from the motion of carriers in semiconductors under the influence of an electric field and a carrier concentration gradient; the behaviour and operation of semiconductor devices, and the fundamentals of CMOS VLSI technology.

Unit Content

  1. Bipolar devices - the transistor action, static characteristics of bipolar transistors, frequency response and switching of bipolar transistors, the thyristor.
  2. Carrier transport phenomena - carrier drift, diffusion and injection.
  3. Energy bands and carrier statistics - semiconductor materials and their structure, valence bonds, energy bands, density of states, intrinsic carrier concentration, donors and acceptors.
  4. Introduction to VLSI - CMOS logic, circuit and system representations, silicon semiconductor technology (wafer processing, oxidation, etc).
  5. Microwave and photonic devices - gallium arsenide MESFET, tunnel diode, light-emitting diode, semiconductor laser, photodetector, solar cells.
  6. Semiconductor p-n junctions and diodes - thermal equilibrium conditions, current-voltage characteristics and junction breakdown.
  7. Unipolar devices - metal-semiconductor contacts, JFET, MESFET, MOS diode, MOSFET.

Additional Learning Experience Information

Lectures, tutorials and laboratory activities.

Assessment

GS1 GRADING SCHEMA 1 Used for standard coursework units

Students please note: The marks and grades received by students on assessments may be subject to further moderation. All marks and grades are to be considered provisional until endorsed by the relevant Board of Examiners.

ON CAMPUS
TypeDescriptionValue
AssignmentTest or assignment(s) - to be determined in consultation with class15%
Laboratory Work ^Laboratory work35%
ExaminationEnd of sememster examination50%

^ Mandatory to Pass

Text References

  • ^ Neaman, D.A. (2003). Semiconductor physics and devices: Basic principles (3rd ed.). Boston: McGraw-Hill.
  • Fraser, D.A. (1990). The physics of semiconductor devices (4th ed.). Oxford: Clarendon Press.
  • Warnes, L.A.A. (1990). Electronic materials. New York: Van Nostrand Reinhold.
  • Sze, S.M. (1985). Semiconductor devices, physics and technology. New York: John Wiley.
  • Streetman, B.G., & Banerjee, S. (2000). Solid state electronic devices (5th ed.). Upper Saddle Valley, New Jersey: Prentice-Hall.
  • Hook, M.N., & Wilson, J. (1991). Solid state physics (2nd ed.). Chichester: John Wiley.
  • Modular Series on Solid State Devices, Volumes I, II, III & IV. Reading, Massachusetts: Addison-Wesley.
  • Rudden, M.N., & Wilson, J. (1993). Elements of solid state physics (2nd ed.). Chichester: John Wiley.
  • Schroder, D.K. (1990). Semiconductor material and device characterisation. New York: John Wiley.
  • Shur, M. (1990). Physics of semiconductor devices. Englewood Cliffs, New Jersey: Prentice-Hall.
  • Solymar, L., & Walsh, D. (1993). Lectures on the electrical properties of materials (5th ed.). Oxford: Oxford University Press.

Journal References

  • IEEE Spectrum, New York: IEEE.
  • IEEE Journal of Solid State Circuits, New York: IEEE Solid-State Circuits Society.
  • IEEE Transactions on Electron Devices, New York: IEEE Electron Devices Society.
  • Physics Today, New York: American Institute of Physics.

^ Mandatory reference


Disability Standards for Education (Commonwealth 2005)

For the purposes of considering a request for Reasonable Adjustments under the Disability Standards for Education (Commonwealth 2005), inherent requirements for this subject are articulated in the Unit Description, Learning Outcomes and Assessment Requirements of this entry. The University is dedicated to provide support to those with special requirements. Further details on the support for students with disabilities or medical conditions can be found at the Access and Inclusion website.

Academic Misconduct

Edith Cowan University has firm rules governing academic misconduct and there are substantial penalties that can be applied to students who are found in breach of these rules. Academic misconduct includes, but is not limited to:

  • plagiarism;
  • unauthorised collaboration;
  • cheating in examinations;
  • theft of other students' work;

Additionally, any material submitted for assessment purposes must be work that has not been submitted previously, by any person, for any other unit at ECU or elsewhere.

The ECU rules and policies governing all academic activities, including misconduct, can be accessed through the ECU website.

SCP3343|1|2